agilent ammc-6440 37 ? 42 ghz power amplifier data sheet features ? ? ? ? ? wide frequency range: 37 - 42 ghz ? ? ? ? ? high gain: 14 db ? ? ? ? ? power: @42 ghz, p-1db=28 dbm ? ? ? ? ? highly linear: oip3=39dbm ? ? ? ? ? integrated rf power detector ? ? ? ? ? 5.5 volt, -0.7 volt, 950ma operation applications ? ? ? ? ? microwave radio systems ? ? ? ? ? lmds & pt-pt mmw long haul ? ? ? ? ? 802.16 & 802.20 wimax bwa ? ? ? ? ? wll and mmds loops ? ? ? ? ? commercial grade military ? ? ? ? ? can be driven by ammc-6345, increasing overall gain. description the ammc-6440 mmic is a broadband 1w power amplifier designed for use in transmitters that operate in various frequency bands between 37ghz and 42ghz. this mmic optimized for linear operation with an output third order intercept point (oip3) of 38dbm. at 42ghz it provides 28dbm of output power (p-1db) and 14db of gain. the device has input and output matching circuitry for use in 50 ? environments. the ammc-6440 also integrates a temperature compensated rf power detection circuit that enables power detection of 0.25v/w. dc bias is simple and the device operates on widely available 5.5v for current supply (negative voltage only needed for vg). it is fabricated in a phemt process for exceptional power and gain performance. for improved reliability and moisture protection, the die is passivated at the active areas. note: these devices are esd sensitive. the following precautions are strongly recommended. ensure that an esd approved carrier is used when dice are transported from one destination to another. personal grounding is to be worn at all times when handling these devices ammc-6440 absolute maximum ratings [1] note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. chip size: 2500 x 1750 m (100 x 69 mils) chip size tolerance: 10 m (0.4 mils) chip thickness: 100 10 m (4 0.4 mils) pad dimensions: 100 x 100 m (4 0.4 mils) symbol parameters/conditions units min. max. v d positive drain voltage v 7 v g gate supply voltage v -3 0.5 i d drain current ma 1500 p in cw input power dbm 23 t ch operating channel temp. c +150 t stg storage case temp. c -65 +150 t max maximum assembly temp (60 sec max) c +300
2 gain at 40 ghz notes: 1. ambient operational temperature t a =25c unless otherwise noted. 2. channel-to-backside thermal resistance ( ch-b ) = 7.5c/w at t channel (t c ) = 100c as measured using infrared microscopy. thermal resistance at backside temperature (t b ) = 25c calculated from measured data. ammc-6440 dc specifications/physical properties [1] notes: 3. small/large -signal data measured in wafer form t a = 25c. 4. 100% on-wafer rf test is done at frequency = 38, 40, and 42 ghz. statistics based on 1500 part sample 5. specifications are derived from measurements in a 50 ? test environment. aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or power matching. ammc-6440 rf specifications [3, 4, 5] t a = 25c, v d =5.5v, i d(q)= 950 ma, z o =50 ? p-1db at 40 ghz p-1db at 42 ghz typical distribution of small signal gain and output power @p-1db. based on 1500 part sampled over several production lots. symbol parameters and test conditions units min. typ. max. i d drain supply current (under any rf power drive and temperature) (v d =5.5 v, v g set for i d ty p i c a l ) ma 950 1050 v g gate supply operating voltage (i d(q) = 950 (ma)) v -0.85 -0.7 -0.65 ch-b thermal resistance [2] (backside temperature, t b = 25c) c/w 6.4 symbol parameters and test conditions units minimum typical maximum sigma gain small-signal gain [4] db 12 14 0.5 p -1db output power at 1db gain compression dbm 26 28 0.39 p -3db output power at 3db gain compression dbm 28.5 0.36 oip3 third order intercept point; ? f=100mhz; pin=-20dbm dbm 38 0.86 rlin input return loss [4] db -16 0.70 rlout output return loss [4] db -18 0.71 isolation min. reverse isolation db -47 3.00 lsl 12 12.5 13 13.5 14 14.5 15 lsl 26 27 28 29 lsl 27 28
3 ammc-6440 typical performances (t a = 25c, v d =5.5 v, i d = 950 ma, z in = z out = 50 ? ? ? ? ? ) note: these measurements are in a 50 ? test environment. aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or power matching figure 1. typical gain and reverse isolation figure 2. typical return loss (input and output) figure 3. typical output power (@p-1db) and pae figure 4. typical noise figure figure 5. typical output 3 rd order intercept pt. figure 6. typical output power, pae, and total drain current versus input power at40ghz figure 7. typical s11 over temperature figure 8. typical s22 over temperature figure 9. typical gain over temperature -30 -25 -20 -15 -10 -5 0 30 35 40 45 50 frequency [ghz] return loss [db] s11[db] s22[db] 0 5 10 15 20 25 30 35 37 39 41 43 45 frequency [ghz] p-1 [dbm], pae [%] p-1 pae 0 5 10 15 20 25 30 35 40 -15 -10 -5 0 5 10 15 20 pin [dbm] po[dbm], and, pae[%] 850 950 1050 1150 1250 ids [ma] pout(dbm) pae[%] id(total) -25 -20 -15 -10 -5 0 25 30 35 40 45 frequency[ghz] s11[db] s11_20 s11_-40 s11_85 0 5 10 15 20 30 35 40 45 50 frequency [ghz] s21[db] -60 -40 -20 s12 [db] s21[db] s12[db] 0 1 2 3 4 5 6 7 8 9 10 32 34 36 38 40 42 44 frequency [ghz] noise figure [db] 30 32 34 36 38 40 32 34 36 38 40 42 44 frequency [ghz] ip3 [dbm] -25 -20 -15 -10 -5 0 25 30 35 40 45 frequency[ghz] s22[db] s22_20 s22_-40 s22_85 5 10 15 20 25 25 30 35 40 45 frequency[ghz] s21[db] s21_20 s21_-40 s21_85
4 figure 10. typical one db compression over temperature typical scattering parameters [1] , (t a = 25c, v d =5.5 v, i d = 950 ma, z in = z out = 50 ? ? ? ? ? ) note: data obtained from on-wafer measurements. s11 s21 s12 s22 freq ghz db mag phase db mag phase db mag phase db mag phase 20 -8.26 0.39 35.28 -3.39 0.68 53.88 -51.52 2.66e-03 82.15 -10.41 0.30 -39.51 21 -9.55 0.33 18.31 -0.13 0.99 -32.46 -53.07 2.22e-03 58.35 -11.90 0.25 -54.15 22 -10.68 0.29 6.50 0.05 1.01 -98.82 -49.74 3.26e-03 107.10 -13.84 0.20 -67.90 23 -11.77 0.26 -4.14 -0.14 0.98 -151.54 -48.39 3.81e-03 136.45 -16.35 0.15 -82.69 24 -12.77 0.23 -11.52 -0.49 0.95 163.34 -43.49 6.69e-03 113.79 -20.06 0.10 -92.28 25 -13.43 0.21 -21.81 -0.41 0.95 125.97 -42.58 7.43e-03 103.95 -25.31 0.05 -93.95 26 -14.12 0.20 -31.29 0.24 1.03 90.59 -39.45 1.07e-02 92.03 -30.03 0.03 -54.19 27 -15.09 0.18 -41.60 1.14 1.14 56.21 -39.32 1.08e-02 84.03 -27.22 0.04 -20.99 28 -16.42 0.15 -51.56 2.48 1.33 21.78 -38.53 1.18e-02 61.72 -23.66 0.07 -16.14 29 -17.94 0.13 -62.21 4.32 1.64 -13.91 -40.36 9.60e-03 53.79 -21.56 0.08 -29.95 30 -18.94 0.11 -73.50 6.33 2.07 -51.69 -36.99 1.41e-02 44.78 -21.11 0.09 -42.93 31 -21.70 0.08 -82.94 8.58 2.69 -93.11 -40.58 9.35e-03 23.71 -21.65 0.08 -53.78 32 -25.86 0.05 -113.23 11.20 3.63 -140.25 -41.25 8.66e-03 27.01 -22.32 0.08 -67.31 33 -42.75 0.01 162.22 13.10 4.52 168.62 -40.97 8.95e-03 35.99 -23.96 0.06 -77.52 34 -29.08 0.04 80.83 14.71 5.44 113.57 -42.41 7.58e-03 18.07 -26.35 0.05 -118.70 35 -22.63 0.07 33.21 14.94 5.58 57.12 -41.53 8.39e-03 22.34 -34.08 0.02 -129.29 36 -19.22 0.11 21.46 14.65 5.40 4.18 -43.59 6.62e-03 42.99 -38.46 0.01 21.71 37 -18.69 0.12 15.80 14.25 5.16 -46.43 -39.17 1.10e-02 32.85 -29.79 0.03 95.54 38 -16.44 0.15 -2.06 13.67 4.82 -95.24 -39.54 1.05e-02 7.47 -25.71 0.05 49.06 39 -16.58 0.15 -19.18 13.65 4.81 -143.86 -39.47 1.06e-02 0.37 -22.80 0.07 32.40 40 -17.21 0.14 -37.99 13.63 4.80 167.35 -44.88 5.70e-03 11.79 -23.37 0.07 11.92 41 -17.47 0.13 -53.55 14.18 5.12 113.76 -40.24 9.72e-03 30.26 -25.74 0.05 -4.19 42 -26.58 0.05 -91.15 14.40 5.25 49.11 -39.66 1.04e-02 -4.22 -26.64 0.05 71.61 43 -33.75 0.02 110.21 13.06 4.50 -25.29 -39.36 1.08e-02 -12.55 -18.85 0.11 55.31 44 -23.07 0.07 40.34 9.09 2.85 -96.84 -43.48 6.70e-03 -17.47 -19.06 0.11 25.20 45 -21.59 0.08 23.11 3.77 1.54 -158.36 -52.98 2.24e-03 -26.13 -19.51 0.11 21.00 46 -21.12 0.09 22.94 -2.00 0.79 149.17 -46.88 4.53e-03 39.82 -19.06 0.11 20.89 47 -18.59 0.12 26.05 -7.54 0.42 105.77 -42.48 7.52e-03 69.08 -18.27 0.12 12.16 48 -17.71 0.13 23.21 -12.29 0.24 69.14 -37.89 1.27e-02 69.52 -16.95 0.14 6.57 49 -15.29 0.17 11.09 -16.78 0.14 36.42 -35.71 1.64e-02 14.63 -17.51 0.13 -11.50 50 -14.03 0.20 8.90 -20.84 0.09 8.48 -33.85 2.03e-02 35.67 -19.70 0.10 -24.97 20 22 24 26 28 30 32 35 37 39 41 43 45 frequency [ghz] p-1 [dbm] p-1_85deg p-1_20deg p-1_-40deg
5 fit used to calculate at any temperature. this method gives an error close to the method #1. the rf ports are ac coupled at the rf input to the first stage and the rf output of the final stage. no ground wired are needed since ground connections are made with plated through-holes to the backside of the device. assembly techniques the backside of the mmic chip is rf ground. for microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1] for best performance, the topside of the mmic should be brought up to the same height as the circuit surrounding it. this can be accomplished by mounting a gold plate metal shim (same length and width as the mmic) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. the amount of epoxy used for the chip and/or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. the ground plain should be free of any residue that may jeopardize electrical or mechanical attachment. the location of the rf bond pads is shown in figure 12. note that all the rf input and output ports are in a ground- signal configuration. rf connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. a single biasing and operation the recommended quiescent dc bias condition for optimum efficiency, performance, and reliability is vd=5.5 volts with vg set for id=950 ma. minor improvements in performance are possible depending on the application. the drain bias voltage range is 3 to 5.5v. a single dc gate supply connected to vg will bias all gain stages. muting can be accomplished by setting vg and /or vg to the pinch-off voltage vp. an optional output power detector network is also provided. the differential voltage between the det-ref and det-out pads can be correlated with the rf power emerging from the rf output port. the detected voltage is given by : ( ) ofs ref v v v v ? ? = det where ref v is the voltage at the r det _ port, det v is a voltage at the o det _ port, and ofs v is the zero-input-power offset voltage. there are three methods to calculate : 1. ofs v can be measured before each detector measurement (by removing or switching off the power source and measuring ). this method gives an error due to temperature drift of less than 0.01db/50c. 2. ofs v can be measured at a single reference temperature. the drift error will be less than 0.25db. 3. ofs v can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear bond wire is normally sufficient for signal connections, however double bonding with 0.7 mil gold wire or use of gold mesh [2] is recommended for best performance, especially near the high end of the frequency band. thermosonic wedge bonding is preferred method for wire attachment to the bond pads. gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams and a ultrasonic power of roughly 55 db for a duration of 76 +/- 8 ms. the guided wedge at an untrasonic power level of 64 db can be used for 0.7 mil wire. the recommended wire bond stage temperature is 150 +/- 2c. caution should be taken to not exceed the absolute maximum rating for assembly temperature and time. the chip is 100um thick and should be handled with care. this mmic has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). this mmic is also static sensitive and esd precautions should be taken. notes: [1] ablebond 84-1 lm1 silver epoxy is recommended. [2] buckbee-mears corporation, st. paul, mn, 800-262-3824
6 figure 11. ammc-6440 schematic figure 12. ammc-6440 bonding pad locations d v g v three stage 0.5w power amplifier in rf out rf det_o det_r dq
7 figure 13. ammc-6440 assembly diagram figure 14. ammc-6440 typical detector voltage and output power, freq=40 ghz notes: 1. 2. 1 f capacitors on gate and drain lines not shown required. vg connection is recommended on both sides for devices operating at or above p1db. rfinput rfoutput rfi rfo g v g v g v d v d v 68 pf ) ( optional v g ammc- 6440 d v d v 0.1 f d v det_o det_r 0.1 f 0.1 f 0.1 f 68 pf 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 5 101520253035 pout[dbm] det_r - det_o [v] 0.0001 0.001 0.01 0.1 1 det_r - det_o [v]
www.agilent.com/ semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152(domestic/inter- national), or 0120-61-1280(domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 20042005 agilent technologies, inc. obsoletes 5989-3233en september 19, 2005 5989-3941en ordering information: ammc-6440-w10 = 10 devices per tray AMMC-6440-W50 = 50 devices per tray
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